Design and Realization of Novel GaAs Based Laser Concepts
Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas.
This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.
Demonstrates how ingenious nanostructure design enables tailoring of key properties of semiconductor lasers Includes detailed analysis of the underlying physics Represents a big step forward for low-cost high-performance applications of GaAs-based nanolasers Nominated as an outstanding contribution by the T.U. Berlin