Defects and Diffusion in Semiconductors
This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).
In addition to the abstracts, the issue includes invited original papers on the topics of 'The Size Distribution of Defect Clusters in n-Si Irradiated with Fast Neutrons' (A.P.Dolgolenko & G.P.Gaidar), 'Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System' (Y.V.Gudyma & I.V.Kruglenko), 'On the Interaction of Dislocations with Impurities in Silicon' (D.Cavalcoli & A.Cavallini), 'Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors' (S.K.Chaudhuri et al.), 'DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon' (M.M.De Souza & J.Goss), 'Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition' (H.H.Radamson & J.Hallstedt), 'Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide' (N.C.Halder).
These 7 invited papers and 625 selected abstracts together provide an up-to-date insight into current and future trends in semiconductor theory, processing and applications as related to diffusional phenomena and defect behavior.